INVITED SPEAKERS

GABRIELE BELLOCCHI

STMicroelectronics

GaN and SiC: latest advancements and perspectives

 

ANDREA CAVIGLIA

University of Geneva

Engineering quantum geometry at oxide interfaces

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PATRICK FIORENZA

CNR-IMM

Reliability issues in SiC power MOSFETs

 

MENGYUAN HUA

Southern University of Science and Technology

Atomistic Modeling of Ga-Based Oxides: Interatomic Potentials, Molecular Dynamics, and Beyond

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MOTOAKI IWAYA

Meijo University

Recent Progress in AlGaN-Based UV-B Laser Diodes

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DEEP JARIWALA

University of Tennessee Knoxville/Oak Ridge National Laboratory

III-Nitride Ferroelectrics for Novel Memory Applications

 

DEBDEEP JENA

Cornell University

XHEMTs: Enabling RF and power electronics on ultrawide bandgap aluminum nitride

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NOBUTO KAGEYAMA

HAMAMATSU PHOTONICS K.K.

Recent Advances in High-Power Laser Diode Technologies for Pumping Applications at Hamamatsu Photonics

MAKOTO KASU

Diamond Semiconductor Co., Ltd, Saga University

Diamond FET for RF Power Applications

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TAE-IL KIM

Sungkyunkwan University (SKKU)

Materials and Device Design for Motion-Artifact Free Bioelectronics :New damping materials and Conductive adhesive

YOUNG DUCK KIM

Kyung Hee University

Moiré Superlattices in Hexagonal Boron Nitride

 

ATSUSHI KOBAYASHI

Tokyo University of Science

Emerging Functionalities in Transition-Metal-Containing Nitrides: From Ferroelectricity to Superconductivity

LINCOLN LAUHON

Northwestern University

Organic intercalation doping of transition metal dichalcogenides

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PHILIPP NEININGER

Fraunhofer IAF

GaN MMICs for mmWave Applications

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ANDREAS PFENNING

Julius-Maximilians-Universität Würzburg

Ferroelectric Integration in III‑V Photonics: Status and Perspective

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BRUCE RAYNER

Kurt J. Lesker Company

PEALD Under Ultrahigh-Purity Conditions: A Pathway to Ferroelectric AlScN and Conformal Growth in 3D Structures

TOMASZ SOCHACKI

GaN-Unipress, Institute of High Pressure Physics PAS

Anisotropy in Ammonothermal Growth of Nitrides: Killer or Ally?

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TETSUYA TAKEUCHI

Meijo University

Hole Formation in Polarization-Doped AlGaN without Mg Doping

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TETSUO UEDA

Kansai University

Gate-Length Scaling of GaN Power Devices for High-Speed Power Conversion in AI Data Centers

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AKIRA UEDONO

University of Tsukuba

Vacancy-type defects in GaN and their annealing behaviors studied by positron annihilation spectroscopy

ZBIGNIEW WASILEWSKI

University of Waterloo, Waterloo, ON, Canada

Terahertz Quantum Cascade Lasers: State of the Art and Outlook

 

RALPH WIRTH

ams-OSRAM International GmbH

Miniaturization Meets Megawatts: Two Scaling Frontiers in Optoelectronics