​A. Epitaxy and process technologies

Elke Meissner (Fraunhofer IISB) - Michal Bockovski (Unipress)

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Covers epitaxial growth of compound semiconductors, nanostructures, 2D materials, and other emerging material systems such as crystal phase transition, spintronics and neuromorphic device. Topics include epitaxy, heteroepitaxy, selective-area epitaxy, van der Waals epitaxy, growth dynamics, process optimization, advanced characterization, device processing/integration, and related applications.

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B. RF and THz devices

Farid Medjdoub (IEMN) - Erik Lind (Lund University, Sweden)

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Microwave, millimeter-wave, and terahertz devices and integrated circuits using high-speed transistors and diodes such as HEMTs, HBTs, and RTDs for RF systems for 5G and beyond, radar systems, sensing applications, and cryogenic amplifiers for quantum computing.

 

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C. Power devices

Jun Suda (Nagoya University) - Srabanti Chowdhury (Stanford University)

 

This track focuses on semiconductor materials, technologies, and devices for efficient power conversion and energy management. Materials of interest include SiC, GaN, diamond, Ga₂O₃, AlN, and other wide- and ultra-wide-bandgap semiconductors. Topics cover substrates, epitaxial growth, material characterization, device processing techniques such as etching, doping, MOS technologies, and contact formation, as well as device design and simulation. The track welcomes contributions on power transistors, Schottky and PiN diodes, vertical and lateral device architectures, reliability and thermal management, gate-driver integrated circuits, and monolithic integration of power devices. Emphasis is placed on technologies enabling high-efficiency, high-voltage, and high-temperature operation for applications in renewable energy, electric vehicles, industrial systems, and power electronics.
 

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D. Photonics and optoelectronics

Asa Haglund (Chalmers University) - Ulrich Schwarz (TU Chemnitz)

 

This track focuses on the development and characterization of compound semiconductor photonic and optoelectronic devices for communication, sensing, imaging, and quantum technologies. Materials of interest include III–V semiconductors such as GaAs, InP, GaN, AlGaAs, InGaAs, and related heterostructures. Topics cover light-emitting devices including LEDs, laser diodes, VCSELs, micro- and nanolasers, photodetectors, solar cells, optical modulators, and integrated photonic circuits. The track also welcomes contributions in nanophotonics, silicon photonics integration, quantum photonics, nonlinear optics, and advanced optical materials, with emphasis on device design, fabrication, characterization, and system-level applications.
 

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E. Ferroelectric, spintronics, and novel device concepts

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Simon Fichtner (Univ. Kiel)

 

This track focuses on emerging device technologies that go beyond conventional semiconductor electronics. It covers ferroelectric materials and devices, spintronic phenomena and applications, and innovative device concepts for future computing, memory, sensing, and energy-efficient electronics. Topics include ferroelectric switching, non-volatile memories, magnetoresistive devices, spin transport and manipulation, multiferroic systems, neuromorphic and in-memory computing devices, quantum-inspired architectures, and other novel device concepts based on advanced material functionalities. The track welcomes contributions spanning material development, device physics, fabrication, characterization, modeling, and system-level applications.

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F. 2D Materials and Nanostructures

track chairs: TBA

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This track focuses on the physics, synthesis, characterization, and device applications of low-dimensional materials and nanostructures. Materials of interest include graphene, carbon nanotubes, transition metal dichalcogenides (TMDs), hexagonal boron nitride, and other emerging two-dimensional materials and heterostructures. Topics cover material growth and fabrication, electronic and optical properties, surface and interface engineering, nanoscale characterization, and theoretical modeling. The track welcomes contributions on applications in nanoelectronics, optoelectronics, sensing, energy technologies, flexible electronics, and quantum devices, highlighting the unique properties that arise from reduced dimensionality and nanoscale architectures.
 

 

G. Oxide materials and devices

Man Hoi Wong (The Hong Kong Univ. of Science and Technology) - Hong Zhou (Xi'dian University)

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This track focuses on the synthesis, characterization, and application of oxide materials for advanced electronic, optoelectronic, magnetic, and energy-related devices. Materials of interest include oxide semiconductors, insulators, transparent conducting oxides, dielectrics, magnetic oxides, superconductors, and amorphous or crystalline oxide systems. Topics cover material growth and processing, structural and functional characterization, defect engineering, and the investigation of electrical, optical, magnetic, and thermal properties. The track also welcomes contributions on oxide-based devices such as transistors, sensors, memories (FeRAM, ReRAM, MRAM, DRAM), Schottky diodes, thin-film electronics, and superconducting devices, with emphasis on both fundamental understanding and technological applications.

 

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H. Physics and Characterization

Filip Tuomisto (Univ. Helsinki) - Takuya Maeda (The University of Tokyo)​

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This track focuses on the fundamental physics of semiconductor materials and devices, as well as advanced characterization techniques used to understand their properties and performance. Topics include electronic, optical, structural, thermal, and magnetic properties of semiconductors; defects and impurities; carrier dynamics; interfaces and heterostructures; and reliability studies. Contributions are welcomed on experimental and theoretical investigations, as well as state-of-the-art characterization methods such as deep level spectroscopy, electron microscopy, spectroscopy, diffraction, scanning probe techniques, positron annihilation spectroscopy, and in situ or operando measurements. The track aims to provide insights into the relation between material properties, device behavior, and performance across a wide range of semiconductor systems.

 

I. Emerging and UltraWideBandgap material systems

Vanya Darakchieva (Lund University) - Hideto Miyake (Mie University)

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This track focuses on the development and application of emerging semiconductor materials and ultra-wide-bandgap (UWBG) material systems for next-generation electronic, photonic, and power devices. Materials of interest include AlN, high-Al-content AlGaN, β-Ga₂O₃, diamond, boron-containing semiconductors, and other novel wide-bandgap compounds. Topics cover material growth, doping, defect control, characterization, device fabrication, and fundamental material physics. The track welcomes contributions on transistors, power devices, UV optoelectronics, sensors, and other innovative applications that leverage the exceptional electrical, thermal, and optical properties of UWBG materials.
 

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