A. Epitaxy and process technologies

Covers epitaxial growth of compound semiconductors, nanostructures, 2D materials, and other emerging material systems such as crystal phase transition, spintronics and neuromorphic device. Topics include epitaxy, heteroepitaxy, selective-area epitaxy, van der Waals epitaxy, growth dynamics, process optimization, advanced characterization, device processing/integration, and related applications.

B. RF & THz devices

Microwave, millimeter-wave, and terahertz devices and integrated circuits using high-speed transistors and diodes such as HEMTs, HBTs, and RTDs for RF systems for 5G and beyond, radar systems, sensing applications, and cryogenic amplifiers for quantum computing.

C. Power devices

Power Devices and related technologies including substrates, epitaxial growth, materal characterization, device processing (etching, MOS, doping, contacts) and device design. Integrated circuits for gate drivers as well as monolithic integrations of power devices are also included.

D. Photonic devices and related technologies

This subcommittee focuses on advances in compound semiconductor photonic devices, nanophotonics, and integrated optical technologies. Topics include lasers, LEDs, VCSELs, detectors, and innovative materials for next-generation communication, sensing, and quantum photonics.

E. Physics, spintronics, and novel device concepts

Physics in micro/nano structures, Spin-related physics and devices, Semiconductor/superconductor hybrid structures, Topological insulators and superconductors

F. Low dimensional materials and structures

Material physics, Devices applications, Synthesis and Characterization of low-dimensional materials such as Graphene, Carbon nanotube, Transition Metal Dichalcogenides, and other 2D materials.

G. Oxide materials and devices

This area welcomes applications for any research related to oxide materials and devices.
For example, research on the synthesis mechanisms and property evaluation of oxides, including single crystals, polycrystalline materials, amorphous materials, semiconductors, insulators, transparent conductors, dielectrics, magnetic materials, and superconductors, and research on the fabrications and characteristics of oxide devices, including MOSFETs、MESFETs、MISFETs、TFTs、sensors、SBDs、DRAMs、FeRAMs、ReRAMs、MRAMs and superconducting devices, are targeted. Research that overlaps with content in other fields will be held as a joint session.

H. Flexible materials

Flexible electronics and related devices and materials, including organic devices, perovskite devices, biomaterials and sensors, and organic–inorganic hybrid materials.